Samsung has begun mass production of the MP9E1 SSD. It promises to be the fastest flash storage device in the company’s catalog. It benefits from an in-house 5nm controller and uses 8th generation V-NAND. The goal is to achieve high sequential read/write speed and energy efficiency.
According to Samsung, its MP9E1 SSD (NVMe 2.0 and PCIe 5.0) can reach a throughput of 14.5 GB/s in sequential reading and 13 GB/s in sequential writing. Its mechanics are based on high-density V-NAND V8 (NAND Flash TLC, Triple Level Cell). This is a high-performance vertical NAND.
This PM9E1 Gen5 will be available in various storage capacities including 512GB, 1TB, 2TB and 4TB, while the 512GB, 1TB and 2TB storage options provide enough space to store files, important applications and games , 4 TB. can store data-intensive programs and large multimedia files and games.
Added to this are SPDM v1.2 security features to ensure that the SSD can have a secure channel, device authentication and firmware tamper certificate.
We don’t have a price or an exact release date.